| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | HAT1096C-EL-EHAT1096C - P-CHANNEL POWER MOSFE | 9,000 | - | RFQ | Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 2.5V, 4.5V | 293mOhm @ 500µA, 4.5V | 1.4V @ 1mA | 2 nC @ 4.5 V | ±12V | 155 pF @ 10 V | - | 790mW (Ta) | 150°C | Surface Mount | |
|   | HAT2203C-EL-EHAT2203C-EL-E - SILICON N CHANNE | 9,000 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 2.5V, 4.5V | 90mOhm @ 1A, 4.5V | 1.4V @ 1mA | 1.8 nC @ 4.5 V | ±12V | 165 pF @ 10 V | - | 830mW (Ta) | 150°C | Surface Mount | |
|   | HAT2205C-EL-EHAT2205C - N-CHANNEL POWER MOSFE | 3,000 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 3A (Ta) | 1.8V, 4.5V | 50mOhm @ 1.5A, 4.5V | 1.2V @ 1mA | 6 nC @ 4.5 V | ±8V | 430 pF @ 10 V | - | 200mW (Ta) | 150°C | Surface Mount | |
|   | UPA1911ATE(0)-T1-AUPA1911A - FIELD-EFFECT TRANSIST | 9,000 | - | RFQ | Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 2.5V, 4.5V | 115mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.3 nC @ 4 V | ±12V | 370 pF @ 10 V | - | 200mW (Ta) | 150°C | Surface Mount | |
|   | 2SK2109-T1-AZ2SK2109-T1-AZ - N-CHANNEL MOS FE | 6,956 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 4V, 10V | 800mOhm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 111 pF @ 10 V | - | 2W (Ta) | 150°C | Surface Mount | |
|   | 2SK3447TZ-E2SK3447TZ-E - SILICON N CHANNEL | 10,000 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Ta) | 4V, 10V | 1.95Ohm @ 500mA, 10V | 2.5V @ 1mA | 4.5 nC @ 10 V | ±20V | 85 pF @ 10 V | - | 900mW (Ta) | 150°C | Through Hole | |
|   | RQA0004LXAQS#H1RQA0004LXAQS - N CHANNEL MOSFET | 10,000 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16 V | 300mA (Ta) | - | - | 900mV @ 1mA | - | ±5V | 10 pF @ 0 V | - | 3W (Ta) | 150°C | Surface Mount | |
|   | UPA1759G-E1-AUPA1759 - SWITCHING N-CHANNEL PO | 5,000 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Tc) | 4V, 10V | 150mOhm @ 2.5A, 10V | 2.5V @ 1mA | 8 nC @ 10 V | ±20V | 190 pF @ 10 V | - | 2W (Ta) | 150°C | Surface Mount | |
|   | UPA1808GR-9JG-E1-AUPA1808 - N CHANNEL MOSFET | 3,000 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.5A (Ta) | 4V, 10V | 17mOhm @ 5A, 10V | 2.5V @ 1mA | 13 nC @ 10 V | ±20V | 660 pF @ 10 V | - | 2W (Ta) | 150°C | Surface Mount | |
|   | HAT1044M-EL-EHAT1044M-EL-E - SILICON P CHANNE | 2,408 | - | RFQ | Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.5V @ 1mA | 13 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.05W (Ta) | 150°C | Surface Mount | |
|   | HS54095TZ-EHS54095TZ-E - N-CHANNEL POWER MO | 7,500 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 200mA (Ta) | 10V | 16.5Ohm @ 100mA, 10V | 5V @ 1mA | 4.8 nC @ 10 V | ±30V | 66 pF @ 25 V | - | 750mW (Ta) | 150°C | Through Hole | |
|   | 2SK3377-Z-AZ2SK3377-Z-AZ - SWITCHING N-CHANN | 8,099 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 4V, 10V | 44mOhm @ 10A, 10V | 2.5V @ 1mA | 17 nC @ 10 V | ±20V | 760 pF @ 10 V | - | 1W (Ta), 30W (Tc) | 150°C | Surface Mount | |
|   | 2SJ358-T1-AZ2SJ358-T1-AZ - P-CHANNEL MOS FET | 5,550 | - | RFQ | Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4V, 10V | 300mOhm @ 1.5A, 10V | 2V @ 1mA | 23.9 nC @ 10 V | +10V, -20V | 600 pF @ 10 V | - | 2W (Ta) | 150°C | Surface Mount | |
|   | RJK6002DPH-E0#T2RJK6002DPH - N CHANNEL MOSFET | 3,467 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 6.8Ohm @ 1A, 10V | 4.5V @ 1mA | 6.2 nC @ 10 V | ±30V | 165 pF @ 25 V | - | 30W (Tc) | 150°C | Through Hole | |
|   | RJK5030DPD-03#J2RJK5030DPD - N CHANNEL MOSFET | 6,000 | - | RFQ | Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Ta) | 10V | 1.6Ohm @ 2A, 10V | 4.5V @ 1mA | - | ±30V | 550 pF @ 25 V | - | 41.7W (Tc) | 150°C | Surface Mount | |
|   | UPA2718GR-E1-ATUPA2718 - POWER FIELD-EFFECT TRA | 2,500 | - | RFQ |   Datasheet | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |